Silicon Cascode FET
Dane techniczne
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| The United Silicon Inc. FETs delivers best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. The high-performance FETs are based on a unique cascode configuration, where a high performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET to produce the only standard gate drive SiC device in the market today. The majority of UnitedSiC devices are AEC-Q101 qualified. |
30 art.
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